Chemical-mechanical planarization system

ABSTRACT

A chemical-mechanical planarization (CMP) system includes a platen, a pad, a polish head, a rotating mechanism, a light source, and a detector. The pad is disposed on the platen. The polish head is configured to hold a wafer against the pad. The rotating mechanism is configured to rotate at least one of the platen and the polish head. The light source is configured to provide incident light to an end-point layer on the wafer. The detector is configured to detect absorption of the incident light by the end-point layer.

PRIORITY CLAIM AND CROSS-REFERENCE

The present application is a divisional application of U.S. applicationSer. No. 14/292,162, filed May 30, 2014, which is hereby incorporated byreference in its entirety.

BACKGROUND

As semiconductor devices are scaled down to submicron dimensions,planarization technology becomes increasingly important, both during thefabrication of the device and for the formation of multi-levelinterconnects and wiring. Chemical-mechanical planarization (CMP) hasrecently emerged as a promising technique for achieving a high degree ofplanarization for submicron very large integrated circuit fabrication.

CMP is a process of smoothing surfaces with the combination of chemicaland mechanical forces. It can be thought of as a hybrid of chemicaletching and free abrasive polishing. The process uses an abrasive andcorrosive chemical slurry (commonly a colloid) in conjunction with apolishing pad and retaining platen, typically of a greater diameter thanthe wafer. The pad and wafer are pressed together by a dynamic polishinghead and held in place by a plastic retaining platen. The dynamicpolishing head is rotated with different axes of rotation (i.e., notconcentric). This removes material and tends to even out any irregulartopography, making the wafer flat or planar. This may be necessary inorder to set up the wafer for the formation of additional circuitelements. For example, this might be necessary in order to bring theentire surface within the depth of field of a photolithography system,or to selectively remove material based on its position. Typicaldepth-of-field requirements are down to Angstrom levels.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A through 1G are cross-sectional views of intermediate steps in areplacement polysilicon gate (RPG) loop of a planar semiconductor deviceaccording to some embodiments of this disclosure;

FIGS. 2A through 2D are cross-sectional views of intermediate steps inan RPG loop of a fin field-effect transistor (finFET) semiconductordevice according to some embodiments of this disclosure;

FIG. 3 is a schematic view of a chemical-mechanical planarization (CMP)system and a wafer according to some embodiments of this disclosure;

FIG. 4 is a schematic view of a CMP end-point detection system, a pad,and the wafer according to some embodiments of this disclosure;

FIGS. 5A and 5B is a schematic cross-sectional view of the wafer duringa CMP process shown in FIGS. 1F and 1G; and

FIG. 6 is a flowchart of a method for polishing the wafer according tosome embodiments of this disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, “around”, “about” or “approximately” shall generallymean within 20 percent, preferably within 10 percent, and morepreferably within 5 percent of a given value or range. Numericalquantities given herein are approximate, meaning that the term “around”,“about” or “approximately” can be inferred if not expressly stated.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising”, or “includes” and/or “including” or “has” and/or“having” when used in this specification, specify the presence of statedfeatures, regions, integers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, regions, integers, steps, operations, elements,components, and/or groups thereof.

It will be understood that when an element is referred to as being “on”another element, it can be directly on the other element or interveningelements may be present therebetween. In contrast, when an element isreferred to as being “directly on” another element, there are nointervening elements present. As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

FIGS. 1A through 1G are cross-sectional views of intermediate steps in areplacement polysilicon gate (RPG) loop of a planar semiconductor deviceaccording to some embodiments of this disclosure. As shown in FIG. 1A, awafer 600 is provided. The wafer 600 includes a substrate 610, aninterlayer dielectric layer 611, a dielectric layer 620, and a dummygate layer 630. The interlayer dielectric layer 611 is formed on thesubstrate 610. The interlayer dielectric layer 611 has a plurality ofslits, such as slits 612N and 612P, therein to expose some parts of thesubstrate 610. The dielectric layer 620 is formed in the slits 612N and612P. The dummy gate layer 630 is formed in the slits 612N and 612P andon the dielectric layer 620.

In some embodiments, the substrate 610 is made of a semiconductor, suchas silicon (Si), gallium arsenide (GaAs), or silicon-on-insulator (SoI).The interlayer dielectric layer 611 is made of a dielectric material,such as phosphosilicate glass (PSG) or borophosphosilicate glass (BPSG).The thickness of the interlayer dielectric layer 611 is in a range fromabout 35 nm to about 60 nm. The dielectric layer 620 is made of adielectric material, such as silicon dioxide (SiO₂) or siliconoxynitride (SiON). The thickness of the dielectric layer 620 is in arange from about 2 nm to about 5 nm. The dummy gate layer 630 is madeof, for example, polycrystalline silicon (Si). The thickness of thedummy gate layer 630 is in a range from about 40 nm to about 100 nm. Theinterlayer dielectric layer 611 and the dummy gate layer 630 may beformed by deposition processes, such as chemical vapor deposition (CVD),plasma enhanced chemical vapor deposition (PECVD), or other depositionprocesses. The dielectric layer 620 may be formed by a thermal process,such as thermal oxidation, or other deposition processes.

Then, as shown in FIG. 1B, the dummy gate layer 630 is removed byetching. Then, as shown in FIG. 1C, the dielectric layer 620 is removedby etching as well.

Then, as shown in FIG. 1D, an intermediate dielectric layer 640 isformed in the slits 612N and 612P and covers the substrate 610, and ahigh-κ dielectric layer 650 is formed to conformally cover theinterlayer dielectric layer 611 and the intermediate dielectric layer640. In some embodiments, the intermediate dielectric layer 640 is madeof a dielectric material, such as silicon dioxide (SiO₂) or siliconoxynitride (SiON). The thickness of the intermediate dielectric layer640 is in a range from about 0.5 nm to about 2 nm. The high-κ dielectriclayer 650 is made of a high-κ dielectric material, such as hafnium oxide(HfO_(x)), lanthanum monoxide (LaO), aluminum monoxide (AlO), aluminumoxide (Al₂O₃), zirconium monoxide (ZrO), titanium monoxide (TiO),tantalum pentoxide (Ta₂O₅), strontium titanate (SrTiO₃), barium titanate(BaTiO₃), hafnium silicate (HfSiO), lanthanum silicate (LaSiO), aluminumsilicate (AlSiO), or hafnium titanate (HfTiO). The thickness of thehigh-κ dielectric layer 650 is in a range from about 0.5 nm to about 2nm. The high-κ dielectric layer 650 may be formed by a depositionprocess, such as chemical vapor deposition (CVD), plasma enhancedchemical vapor deposition (PECVD), or other deposition processes. Theintermediate dielectric layer 640 may be formed by a thermal process,such as thermal oxidation, or other deposition processes.

Then, as shown in FIG. 1E, a P-type metal-oxide-semiconductor workfunction layer (pMOS work function layer) 660 is formed to conformallycover the high-κ dielectric layer 650. In some embodiments, the pMOSwork function layer 660 is made of, for example, titanium nitride orsilicon nitride. The thickness of the pMOS work function layer 660 is ina range from about 0.5 nm to about 6 nm. The pMOS work function layer660 may be formed by a deposition process, such as chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD),sputtering, or other deposition processes. After the pMOS work functionlayer 660 is formed, the upper surface of the pMOS work function layer660 is oxidized to form a surface layer 665. The surface layer 665 canbe an end-point layer for a chemical-mechanical planarization (CMP)process. The CMP process is discussed in more detail below.

Then, as shown in FIG. 1F, a planarization layer 670 is formed on thesurface layer 665. In some embodiments, the planarization layer 670 ismade of, for example, silicon dioxide (SiO₂). The thickness of theplanarization layer 670 is in a range from about 100 nm to about 250 nm.The planarization layer 670 may be formed by, for example, a spin-onglass (SOG) process.

Then, as shown in FIG. 1G, the CMP process is performed on theplanarization layer 670 to remove the planarization layer 670 outsidethe slits 612N and 612P, while leaving the planarization layer 670remaining in the slits 612N and 612P. After the CMP process, theplanarization layer 670 remaining in the slits 612N and 612P is replacedwith metal gates to form high-κ/metal gate structures.

As shown in FIGS. 1F and 1G, the CMP process to remove the planarizationlayer 670 outside the slits 612N and 612P is designed to stop at thesurface layer 665 to prevent the pMOS work function layer 660 from beingdamaged by the CMP process. However, the surface layer 665 is thin andis difficult to be detected. Furthermore, as shown in FIG. 1F, since thepMOS work function layer 660 is nonplanar, the upper surface 671 of theplanarization layer 670 may also be nonplanar, resulting in a seriouspattern loading effect. The pattern loading effect makes it furtherdifficult to stop the CMP process at the surface layer 665.

FIGS. 2A through 2D are cross-sectional views of intermediate steps inan RPG loop of a fin field-effect transistor (finFET) semiconductordevice according to some embodiments of this disclosure. As shown inFIG. 2A, a wafer 600 is provided. The wafer 600 includes a substrate610, an interlayer dielectric layer 611, a plurality of fins 613, aplurality of shallow trench isolation (STI) dielectrics 614, anintermediate dielectric layer 640, and a high-κ dielectric layer 650.The interlayer dielectric layer 611 is formed on the substrate 610. Theinterlayer dielectric layer 611 has a plurality of slits, such as slits612N and 612P, therein to expose some parts of the substrate 610. Thefins 613 are disposed on the substrate 610. At least one of the fins 613is disposed in the slit 612N, and at least one of the fins 613 isdisposed in the slit 612P. In FIG. 2A, there are two fins 613 disposedin the slit 612N, and there is one fin 613 disposed in the slit 612P.The STI dielectrics 614 are formed in the slits 612N and 612P. A lowerportion of at least one of the fins 613 is surrounded by at least one ofthe STI dielectrics 614. For example, a lower portion of the fin 613 inthe slit 612P is surrounded by the STI dielectric 614 in the slit 612P.The intermediate dielectric layer 640 covers the fins 613. The high-κdielectric layer 650 is formed to conformally cover the interlayerdielectric layer 611, the STI dielectrics 614, and the intermediatedielectric layer 640, and some parts of the high-κ dielectric layer 650are disposed in the slits 612N and 612P.

In some embodiments, the substrate 610 is made of a semiconductor, suchas silicon (Si), gallium arsenide (GaAs), or silicon-on-insulator (SoI).The interlayer dielectric layer 611 is made of a dielectric material,such as phosphosilicate glass (PSG) or borophosphosilicate glass (BPSG).The thickness of the interlayer dielectric layer 611 is in a range fromabout 200 nm to about 300 nm. The fins 613 are made of a semiconductormaterial, such as silicon (Si) or silicon germanium (SiGe). The heightof at least one of the fins 613 is in a range from about 180 nm to about220 nm. The STI dielectrics 614 are made of a dielectric material, suchas silicon dioxide (SiO₂). The thickness of at least one of the STIdielectrics 614 is in a range from about 120 nm to about 150 nm. Theintermediate dielectric layer 640 is made of a dielectric material, suchas silicon dioxide (SiO₂) or silicon oxynitride (SiON). The thickness ofthe intermediate dielectric layer 640 is in a range from about 0.5 nm toabout 2 nm. The high-κ dielectric layer 650 is made of a high-κdielectric material, such as hafnium oxide (HfO_(x)), lanthanum monoxide(LaO), aluminum monoxide (AlO), aluminum oxide (Al₂O₃), zirconiummonoxide (ZrO), titanium monoxide (TiO), tantalum pentoxide (Ta₂O₅),strontium titanate (SrTiO₃), barium titanate (BaTiO₃), hafnium silicate(HfSiO), lanthanum silicate (LaSiO), aluminum silicate (AlSiO), orhafnium titanate (HfTiO). The thickness of the high-κ dielectric layer650 is in a range from about 0.5 nm to about 2 nm. The interlayerdielectric layer 611, the STI dielectrics 614, and the high-κ dielectriclayer 650 may be formed by deposition processes, such as chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD), orother deposition processes. The intermediate dielectric layer 640 may beformed by a thermal process, such as thermal oxidation, or otherdeposition processes. The fins 613 may be formed by etching thesubstrate 610.

Then, as shown in FIG. 2B, a pMOS work function layer 660 is formed toconformally cover the high-κ dielectric layer 650. In some embodiments,the pMOS work function layer 660 is made of, for example, titaniumnitride or silicon nitride. The thickness of the pMOS work functionlayer 660 is in a range from about 0.5 nm to about 6 nm. The pMOS workfunction layer 660 may be formed by a deposition process, such aschemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), sputtering, or other deposition processes. After thepMOS work function layer 660 is formed, the upper surface of the pMOSwork function layer 660 is oxidized to form a surface layer 665. Thesurface layer 665 can be an end-point layer for a CMP process. The CMPprocess is discussed in more detail below.

Then, as shown in FIG. 2C, a planarization layer 670 is formed on thesurface layer 665. In some embodiments, the planarization layer 670 ismade of, for example, silicon dioxide (SiO₂). The thickness of theplanarization layer 670 is in a range from about 100 nm to about 250 nm.The planarization layer 670 may be formed by, for example, a spin-onglass (SOG) process.

Then, as shown in FIG. 2D, the CMP process is performed on theplanarization layer 670 to remove the planarization layer 670 outsidethe slits 612N and 612P, while leaving the planarization layer 670remaining in the slits 612N and 612P.

As shown in FIG. 2C, due to the nonplanar structure of the interlayerdielectric layer 611, the fins 613, and the STI dielectrics 614, theupper surface 671 of the planarization layer 670 may also be nonplanar,resulting in a pattern loading effect. The pattern loading effect may bemore serious in the finFET semiconductor device than in the planarsemiconductor device due to the fins 613, and thus it becomes furtherdifficult to stop the CMP process at the surface layer 665.

According to various embodiments of the present disclosure, aplanarization method, a method for polishing a wafer, and a CMP systemare provided to stop the CMP process at an end point layer, e.g. thesurface layer 665 (shown in FIGS. 1F and 1G or FIGS. 2C and 2D).

FIG. 3 is a schematic view of the CMP system 200 and the wafer 600according to some embodiments of this disclosure. FIG. 4 is a schematicview of a CMP end-point detection system 100, a pad 220, and the wafer600 according to some embodiments of this disclosure. As shown in FIGS.3 and 4, the CMP system 200 includes a platen 210, the pad 220, a polishhead 230, a slurry introduction mechanism 250, a rotating mechanism 260,the CMP end-point detection system 100, and a control module 240. Thepad 220 is disposed on the platen 210, and the pad 220 has a window 221therein. The polish head 230 holds the wafer 600 against the pad 220.The slurry introduction mechanism 250 introduces slurry 252 onto the pad220. The rotating mechanism 260 rotates at least one of the platen 210and the polish head 230. The CMP end-point detection system 100 includesa light source 110 and a detector 120. When the CMP system 200 is usedto perform the CMP process, the light source 110 can provide an incidentlight 300 to an end point layer, e.g. the surface layer 665 (shown inFIGS. 1F and 1G or FIGS. 2C and 2D). The detector 120 can detectabsorption of the incident light 300 by the end point layer. The controlmodule 240 can stop the rotating mechanism 260 to rotate at least one ofthe platen 210 and the polish head 230 in response to an increase in thedetected absorption of the incident light 300.

In some embodiments of this disclosure, the photon energy of theincident light 300 provided by the light source 110 is greater than theband gap energy of the end point layer. Because the photon energy of theincident light 300 is greater than the band gap energy of the end pointlayer, the photons of the incident light 300 excites the end point layerwhen the photons of the incident light 300 hit the end point layer.Thus, the photon energy of the incident light 300 is absorbed by the endpoint layer, and the photon energy of the incident light 300 absorbed bythe end point layer is substantially equal to the band gap energy of theend point layer. Then, the end point layer emits an exiting light 400 orreflects the incident light 300 to be the exiting light 400.

The detector 120 receives the exiting light 400 and detects theabsorption of the incident light 300 by the end point layer according tothe received exiting light 400. The absorption of the incident light 300by the end point layer increases when the end point layer is exposed.Therefore, the CMP system 200 can stop the CMP process at the end pointlayer in response to the increase in the absorption of the incidentlight 300 by the end point layer.

FIGS. 5A and 5B is a schematic cross-sectional view of the wafer 600during the CMP process shown in FIGS. 1F and 1G. As shown in FIGS. 3, 4and 5A, the surface layer 665 is sandwiched between the planarizationlayer 670 and the pMOS work function layer 660. When the CMP system 200is actuated to polish the wafer 600, the CMP end-point detection system100 is also activated to detect whether the surface layer 665 isexposed, i.e. whether the planarization layer 670 is removed.

When the CMP end-point detection system 100 is activated, the lightsource 110 provides the incident light 300 to a surface of the wafer 600under the CMP process. Specifically, when the incident light 300 passesthe planarization layer 670, the majority of the incident light 300 isscattered or absorbed by the planarization layer 670. Therefore, even ifa portion of the incident light 300 hits the surface layer 665, theamount of the incident light 300 that hits the surface layer 665 issmall. Therefore, the amount of the detected absorption of the incidentlight 300 by the surface layer 665 is small as well.

As shown in FIGS. 3, 4, and 5B, when the planarization layer 670 outsidethe slit 612N and 612P is removed by the CMP process, and the surfacelayer 665 is exposed, the incident light 300 hits the surface layer 665without obstacles, and the incident light 300 directly excites thesurface layer 665. As a result, the detected absorption of the incidentlight 300 by the surface layer 665 increases, and the CMP system 200 canstop the CMP process at the surface layer 665 in response to theincrease in the detected absorption of the incident light 300.

In some embodiments, the surface layer 665 may be made of asemiconductor material, such as titanium oxide (TiO_(x)), specifically,titanium dioxide (TiO₂), or titanium oxynitride (TiON). Titanium oxideor titanium oxynitride may be formed by oxidizing the upper surface ofthe pMOS work function layer 660 when the pMOS work function layer 660is made of titanium nitride (TiN). The oxidation of the upper surface ofthe pMOS work function layer 660 occurs when the vacuum environment forforming the pMOS work function layer 660 is broken.

When the surface layer 665 is made of titanium dioxide, the photonenergy of the incident light 300 provided by the light source 110 may begreater than approximately 5.2×10⁻¹⁹ joules, which is equal to the bandgap energy of titanium dioxide. In other words, a frequency of theincident light 300 provided by the light source 110 is greater thanapproximately 7.9×10¹⁴ Hz, or a wavelength of the incident light 300provided by the light source 110 is approximately shorter than 380 nm.

In some embodiments, the surface layer 665 is made of amorphous siliconoxide (SiO_(x)), specifically, amorphous silicon dioxide (SiO₂). Thephotoelectric characteristics of amorphous silicon dioxide are similarto semiconductor materials. Amorphous silicon dioxide may be formed bythermally oxidizing the upper surface of the pMOS work function layer660 in an oxygen and/or nitrogen environment when the pMOS work functionlayer 660 is made of silicon nitride (SiN).

In some embodiments, the light source 110 may be a laser module. Theintensity of the incident light 300 emitted by the laser module isstrong, so the intensity of the exiting light 400 is also strong enoughto be detected by detector 120.

In some embodiments, the light source 110 is a helium-cadmium laser. Thefrequency of the laser emitted by the helium cadmium laser isapproximately 9.2×10¹⁴ Hz. In other words, the wavelength of the laseremitted by the helium cadmium laser is approximately 325 nm.

In some embodiments, photoluminescence emitted by the surface layer 665is considered the exiting light 400. The detector 120 is aphotoluminescence light detector for detecting the photoluminescenceemitted by the surface layer 665 due to the absorption of the incidentlight 300. When the incident light 300 hits the surface layer 665,valence electrons of the surface layer 665 are excited, and then theexcited electrons of the surface layer 665 emit the exiting light 400with photon energy substantially equal to the band gap energy of thesurface layer 665 and then become ground state electrons.

In some embodiments, a photon energy detection range of the detector 120encompasses the band gap energy of the surface layer 665. When thesurface layer 665 is made of titanium dioxide, the detector 120 may bean ultraviolet light detector. The photon energy detection range of thedetector 120 is from about 2.8×10⁻¹⁹ joules to about 6.6×10⁻¹⁹ joules,which encompasses the band gap energy of titanium dioxide. In otherwords, a frequency detection range of the detector 120 is from about4.3×10¹⁴ Hz to about 1.0×10¹⁵ Hz, or a wavelength detection range of thedetector 120 is from about 300 nm to about 700 nm. In some embodiments,when the surface layer 665 is made of amorphous silicon oxide, thedetection range of the detector 120 may vary to encompass the band gapenergy of amorphous silicon dioxide.

In some embodiments, the reflected incident light from the surface layer665 is considered the exiting light 400. When the incident light 300hits the surface layer 665, the surface layer 665 is excited, and a partof the photon energy of the incident light 300 is absorbed by thevalence electrons of the surface layer 665. Then, the incident light 300is reflected by the surface layer 665 and becomes the exiting light 400.An energy difference between the photon energy of the incident light 300and the photon energy of the exiting light 400 is substantially equal tothe band gap energy of the surface layer 665. Therefore, the detector120 can determine whether light received by the detector 120 originatesfrom the surface layer 665 according to its photon energy.

If the light source 110 is a laser module, which emits monochromaticlight, the photon energy of the incident light 300 is fixed, and thephoton energy of the exiting light 400 originating from the surfacelayer 665 is fixed in a small range. Therefore, the detector 120 can bedesigned to detect only light with photon energy in the small range, andthe detection may become more precise.

For detecting the incident light 300 reflected by the surface layer 665,the detector 120 may be a Raman scattering spectrum detector. When thesurface layer 665 is made of titanium dioxide, a wavenumber range of theRaman scattering spectrum detector 120 is from about 800 centimeter⁻¹ to2000 centimeter⁻¹.

The window 221 is substantially transparent to the incident light 300and the exiting light 400. The light source 110 and the detector 120 aredisposed beneath the pad 220, and the light source 110 and the detector120 are disposed adjacent to the window 221. Therefore, the incidentlight 300 provided by the light source 110 can pass through the window221 and then hits the wafer 600, and the exiting light 400 originatingfrom the wafer 600 can pass through the window 221 and then is receivedby the detector 120. In some embodiments, the window 221 is a throughhole in the pad 220.

FIG. 6 is a flowchart of a method for polishing the wafer 600 accordingto some embodiments of this disclosure. As shown in FIGS. 3-6, themethod for polishing the wafer 600 includes the following operations.The wafer 600 is held against the pad 220 (operation 10). At least oneof the wafer 600 and the pad 220 is rotated (operation 20). The incidentlight 300 is provided to the surface layer 665, e.g., the end-pointlayer, on the wafer 600 (operation 30). The absorption of the incidentlight 300 by the surface layer 665 on the wafer 600 is detected(operation 40). The rotation of at least one of the wafer 600 and thepad 220 is stopped in response to the increase in the detectedabsorption of the incident light 300 (operation 50).

In operation 50, the detecting can be achieved by detectingphotoluminescence emitted by the surface layer 665 due to the absorptionof the incident light 300 or by detecting the reflected incident light300 from the surface layer 665 after the absorption of the incidentlight 300.

In order to prevent over-polishing during gate formation, a CMP processfor removing a planarization layer is designed to stop at a surfacelayer underneath the planarization layer. The surface layer is formed ona work function layer and oxidized from the work function layer. Duringthe CMP process, an incident light is applied on a wafer surface incontact with the planarization pad of the planarization head. When theplanarization layer is removed to expose the surface layer, a detectordetects the absorption of the incident light by the surface layer, whichcould trigger endpoint of the planarization process. The embodiments ofendpoint mechanisms described reduce over-polishing.

According to some embodiments, a CMP system includes a platen, a pad, apolish head, a rotating mechanism, a light source, and a detector. Thepad is disposed on the platen. The polish head is configured to hold awafer against the pad. The rotating mechanism is configured to rotate atleast one of the platen and the polish head. The light source isconfigured to provide incident light to an end-point layer on the wafer.The detector is configured to detect absorption of the incident light bythe end-point layer.

According to some embodiments, a CMP system includes a platen, a pad, apolish head, a rotating mechanism, a light source, and a detector. Thepad is disposed on the platen. The polish head is configured to hold awafer against the pad. The rotating mechanism is configured to rotate atleast one of the platen and the polish head. The light source isconfigured to provide incident light to an end-point layer on the wafer.The detector is configured to detect exiting light from the end-pointlayer, in which the detector has a photon energy detection rangeencompassing band gap energy of the end-point layer.

According to some embodiments, a CMP system includes a platen, a pad, apolish head, a rotating mechanism, a light source, and a detector. Thepad is disposed on the platen. The polish head is configured to hold awafer against the pad. The rotating mechanism is configured to rotate atleast one of the platen and the polish head. The light source isconfigured to provide incident light to an end-point layer on the wafer,in which photon energy of the incident light provided by the lightsource is greater than band gap energy of the end-point layer. Thedetector is configured to detect exiting light from the end-point layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A chemical-mechanical planarization (CMP) systemcomprising: a platen; a pad disposed on the platen; a polish headconfigured to hold a wafer against the pad; a rotating mechanismconfigured to rotate at least one of the platen and the polish head; alight source configured to provide incident light to an end-point layeron the wafer; and a detector configured to detect intensity increase dueto absorption of the incident light by the end-point layer.
 2. The CMPsystem of claim 1, further comprising: a control module configured tostop the rotating mechanism to rotate said at least one of the platenand the polish head in response to an increase in the detectedabsorption of the incident light.
 3. The CMP system of claim 1, whereinthe light source is configured to provide the incident light with photonenergy greater than band gap energy of the end-point layer.
 4. The CMPsystem of claim 1, wherein the light source is configured to provide theincident light with photon energy greater than approximately 5.2×10⁻¹⁹joules.
 5. The CMP system of claim 1, wherein the detector has a photonenergy detection range encompassing band gap energy of the end-pointlayer.
 6. The CMP system of claim 1, wherein the detector is aphotoluminescence light detector configured to detect photoluminescenceemitted by the end-point layer due to the absorption of the incidentlight.
 7. The CMP system of claim 1, wherein the detector is anultraviolet light detector.
 8. The CMP system of claim 1, wherein thedetector has a photon energy detection range from about 2.8×10⁻¹⁹ joulesto about 6.6×10⁻¹⁹ joules.
 9. The CMP system of claim 1, wherein thedetector is a Raman scattering spectrum detector configured to detectreflected incident light from the end-point layer after the absorptionof the incident light.
 10. The CMP system of claim 9, wherein the Ramanscattering spectrum detector has a wavenumber range from about 800centimeter⁻¹ to about 2000 centimeter⁻¹.
 11. A chemical-mechanicalplanarization (CMP) system comprising: a platen; a pad disposed on theplaten; a polish head configured to hold a wafer against the pad; arotating mechanism configured to rotate at least one of the platen andthe polish head; a light source configured to provide incident light toan end-point layer on the wafer; and a detector configured to detectintensity increase of exiting light from the end-point layer, whereinthe detector has a photon energy detection range encompassing a band gapenergy of the end-point layer.
 12. The CMP system of claim 11, whereinthe pad is present between the light source and the wafer, the pad has awindow therein, and the window is substantially transparent to theincident light.
 13. The CMP system of claim 12, wherein the window is athrough hole in the pad.
 14. The CMP system of claim 11, wherein the padis present between the detector and the wafer, the pad has a windowtherein, and the window is substantially transparent to the exitinglight.
 15. The CMP system of claim 14, wherein the window is a throughhole in the pad.
 16. A chemical-mechanical planarization (CMP) systemcomprising: a platen; a pad disposed on the platen; a polish headconfigured to hold a wafer against the pad; a rotating mechanismconfigured to rotate at least one of the platen and the polish head; alight source configured to provide incident light to an end-point layeron the wafer, wherein photon energy of the incident light provided bythe light source is greater than band gap energy of the end-point layer;and a detector configured to detect a change of intensity of exitinglight from the end-point layer.
 17. The CMP system of claim 16, whereinthe light source is a laser module.
 18. The CMP system of claim 16,wherein the light source is configured to provide the incident lightwith a frequency greater than approximately 7.9×10¹⁴ Hz.
 19. The CMPsystem of claim 16, wherein the light source is a helium-cadmium lasermodule.
 20. The CMP system of claim 16, wherein the detector has afrequency detection range from about 4.3×10¹⁴ Hz to about 1.0×10¹⁵ Hz.